[O2-5] Wide-Bandgap Power Devices Gate Driving and Reliability

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[O2-5-01] Short-circuit Protections of Parallel-Connected SiC MOSFET Modules Based on Electro-thermal Design with Internal Capacitance

*Makiko Hirano¹, Kazuya Kodani¹, Akihisa Matsushita¹ (1. Toshiba Corporation (Japan))

Keywords:

circuit simulation,device model,short circuit,SiC-MOSFET