[O2-5] Wide-Bandgap Power Devices Gate Driving and Reliability | IPEC2026

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Session Details

Regular SessionSemiconductor Power Conversion : New generation Power device, Passive components and materials

[O2-5]Wide-Bandgap Power Devices Gate Driving and Reliability

Mon. Jun 1, 2026 2:30 PM - 4:10 PM JST
Mon. Jun 1, 2026 5:30 AM - 7:10 AM UTC

Room 103(1F)

Chair:Morten Rahr Nielsen(Aalborg University), Takashi Sawada(Nagoya University)

2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[O2-5-01]Short-circuit Protections of Parallel-Connected SiC MOSFET Modules Based on Electro-thermal Design with Internal Capacitance

*Makiko Hirano¹, Kazuya Kodani¹, Akihisa Matsushita¹ (1. Toshiba Corporation (Japan))

2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[O2-5-02]Implementation of Gate Oscillation Suppression Method that Does Not Deteriorate Switching Characteristics

*Ryoga KIGUCHI¹, Hiromu TAKUBO¹, Masakazu GEKINOZU¹ (1. Fuji Electric Co., Ltd. (Japan))

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[O2-5-03]Trade-off Design on Gate-Circuit for Paralleled 2.3kV SiC MOSFET Power Modules

*Narendra Shankar Walawalkar¹, Nianzun Qi¹, Morten Rahr Nielsen¹, Stig Munk-Nielsen¹ (1. Aalborg University (Denmark))

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[O2-5-04]Evaluating Bidirectional GaN HEMT, SiC MOSFET, and Si IGBT for ARCP Inverter Auxiliary Circuits

*Thomas Lehmeier¹, Yan Zhou¹, Adrian Amler¹, Ajay Poonjal Pai², Martin März¹ (1. Institute of Power Electronics, Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Sanan Semiconductor (Germany))

3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[O2-5-05]Potential of a Darlington Configuration using Si-SJBJT and Si-SJMOSFET as a Power-switching Device

*Koji Yano¹, Daiki Mitsui¹ (1. University of Yamanashi (Japan))

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