[O2-5] Wide-Bandgap Power Devices Gate Driving and Reliability

3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[O2-5-03] Trade-off Design on Gate-Circuit for Paralleled 2.3kV SiC MOSFET Power Modules

*Narendra Shankar Walawalkar¹, Nianzun Qi¹, Morten Rahr Nielsen¹, Stig Munk-Nielsen¹ (1. Aalborg University (Denmark))

Keywords:

1500V architecture,VGS oscillation,Current imbalance,Paralleling power modules,2.3kV SiC Power Modules