Presentation Information

3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[O2-5-04]Evaluating Bidirectional GaN HEMT, SiC MOSFET, and Si IGBT for ARCP Inverter Auxiliary Circuits

*Thomas Lehmeier¹, Yan Zhou¹, Adrian Amler¹, Ajay Poonjal Pai², Martin März¹ (1. Institute of Power Electronics, Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany), 2. Sanan Semiconductor (Germany))

Keywords:

Auxiliary resonant commutated pole (ARCP),comparison,efficiency,gallium nitride (GaN) high-electron-mobility transistor (HEMT),monolithic bidirectional switch (M-BDS),silicon carbide (SiC) MOSFET,soft-switching technique,three-phase inverter,zero-voltage switching (ZVS)

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