[O2-5] Wide-Bandgap Power Devices Gate Driving and Reliability

3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[O2-5-05] Potential of a Darlington Configuration using Si-SJBJT and Si-SJMOSFET as a Power-switching Device

*Koji Yano¹, Daiki Mitsui¹ (1. University of Yamanashi (Japan))

Keywords:

superjunction,power devices,darlington configuration,bipolar transistor