[O3-3] Reliability and Lifetime Assessment of Semiconductor Devices

4:30 PM - 4:50 PM JST(7:30 AM - 7:50 AM UTC)

[O3-3-01] Predicting the switching lifetime of GaN HEMTs in LLC converters and Totem-Pole PFCs

*Hiroshi Yamashita¹, Hirokazu Oki¹, Toshiyuki Zaitsu¹ (1. ROHM Co., Ltd. (Japan))

Keywords:

Gallium Nitride High Electron Mobility Transistor,Semiconductor device reliability,Soft-switching lifetime,Wide bandgap semiconductor