[O6-10] Semiconductor Power Conversion

3:20 PM - 3:40 PM JST(6:20 AM - 6:40 AM UTC)

[O6-10-04] Demostration of A 1700V Enhancement Mode pGaN Gate HEMT Power Device on Sapphire Substrate

*Ju Gao¹, Ziheng Liu¹, Jiayin He¹, Wenbo Xia¹, Chengkang Ao¹, Hongjie Peng¹, Lanlan Wang¹, Yimeng Cai², Yi Sun², Zhaohui Cheng³, Yong Xie³, Jin Wei¹, Jinyan Wang¹ (1. Peking University (China), 2. ZhiCheng Semiconductor (Anhui) Co., Ltd (China), 3. Dongke Semiconductor (Anhui) Co., Ltd (China))

Keywords:

GaN,pGaN gate,sapphire substrate,high-voltage