Presentation Information
[P2-3-13]Reliability Evaluation of 650 V E-Mode GaN Devices Under HTRB and H3TRB Stress
*Mateja Novak1, Kaichen Zhang1, Senyu Du1, Arlene Rementeria1, Shuai Zhao1, Dao Zhou1, Francesco Iannuzzo2 (1. Aalborg University (Denmark), 2. Politecnico di Torino (Italy))
Keywords:
Accelerated testing,GaN,HTGB,HTRB,H3TRB,Reliability