Plasma Scienec & Technologies 1

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[04pA06O] Evaluation of Lateral Selective Etching with CF₄/H₂ Plasma of Si_0.7Ge_0.3/Si/Si_0.7Ge_0.3 Layers

*Kotaro Ozaki¹, Noriharu Takada¹, Yusuke Imai¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Yuji Yamamoto², Wei-Chen Wen², Katsunori Makihara¹ (1. Nagoya University (Japan), 2. IHP (Germany))