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Session Details

Invited & OralPlasma Science & Technologies

Plasma Scienec & Technologies 1

Tue. Mar 4, 2025 2:30 PM - 4:00 PM JST
Tue. Mar 4, 2025 5:30 AM - 7:00 AM UTC
Room A(Active Plaza)
Chair:Haruka Suzuki(Nagoya University)
Plasma etching technology
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[04pA04I]Environmentally Friendly Chemistry for SiO2 Plasma Etch

Nathan Stafford1, Colin Jennings1, Phong Nguyena1, Igor Rzeplinski2, Goran Bacic1, *Vladislav Gamaleev2, Manh Hung2 (1. American Air Liquide, Inc. (United States of America), 2. Air Liquide Laboratories Innovation Campus Tokyo (Japan))
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[04pA05O]Non-Halogen Atomic Layer Etching of HfO2 by Alternating N2 and O2 Plasma at Room Temperature

*Shih-Nan Hsiao1, Pak-Man Yiu2, Li-Chun Chang2, Jyh-Wei Lee2, Makoto Sekine1, Masaru Hori1 (1. Nagoya University (Japan), 2. Ming Chi University of Technology (Taiwan))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[04pA06O]Evaluation of Lateral Selective Etching with CF4/H2 Plasma of Si0.7Ge0.3/Si/Si0.7Ge0.3 Layers

*Kotaro Ozaki1, Noriharu Takada1, Yusuke Imai1, Takayoshi Tsutsumi1, Kenji Ishikawa1, Yuji Yamamoto2, Wei-Chen Wen2, Katsunori Makihara1 (1. Nagoya University (Japan), 2. IHP (Germany))
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[04pA07O]The Effect of SiN Substrate Cooling on Radical Species during CF4/H2 Etching

*Michael Mo1, Shih-Nan Hsiao1, Makoto Sekine1, Masaru Hori1, Nikolay Britun1 (1. Nagoya University (Japan))
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[04pA08O]In-Situ Analysis of Chlorination of Tin Surfaces by Chlorine Radical Irradiations

*Shunya Hirai1, Kazunori Shinoda2, Thi-Thuy-Nga Nguyen1, Takayoshi Tsutsumi1, Kenichi Inoue1, Kenji Ishikawa1 (1. Nagoya University (Japan), 2. Hitachi High-Tech Corp. (Japan))
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