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Presentation Information

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[04pA07O]The Effect of SiN Substrate Cooling on Radical Species during CF4/H2 Etching

*Michael Mo1, Shih-Nan Hsiao1, Makoto Sekine1, Masaru Hori1, Nikolay Britun1 (1. Nagoya University (Japan))
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