Wide Band Gap Semiconductors 3

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[06aC04O] Demonstration of GaN-Based npn HBTs with a GaInN/GaN MQW Structure as a P-Type Base Region

*Ryosei Inoue¹, Tomoki Kojima¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1. Nagoya Institute of Technology (Japan))