Session Details

Wide Band Gap Semiconductors 3

Thu. Mar 6, 2025 9:30 AM - 11:00 AM JST
Thu. Mar 6, 2025 12:30 AM - 2:00 AM UTC
Room C(Building 9, 2F, Room 922)
Chair:Tetsuya Suemitsu(Tohoku University), Manato Deki(Nagoya University)

[06aC01I]Mg-Intercalated GaN Superlattices and 2D-Mg Doping of GaN

*Jia Wang1, Hiroshi Amano1 (1. Nagoya University (Japan))

[06aC02I]InN/InAlN Heterostructures for New Generation of Fast Electronics

*Jan Kuzmik1 (1. Slovak Academy of Science (Slovakia))

[06aC03O]Elastic- and Plastic-Deformation around Micro-Scraches on 4H-SiC Surface Evaluated by Micro-Raman Spectroscopy

Hiroyoshi Watanabe1, Yuma Yasui1, *Hiroyuki Iwata1, Nobuhiko Sawaki1 (1. Aichi Institute of Technology (Japan))

[06aC04O]Demonstration of GaN-Based npn HBTs with a GaInN/GaN MQW Structure as a P-Type Base Region

*Ryosei Inoue1, Tomoki Kojima1, Akira Mase1, Takashi Egawa1, Makoto Miyoshi1 (1. Nagoya Institute of Technology (Japan))