Wide Band Gap Semiconductors 4

6:00 PM - 6:30 PM JST(9:00 AM - 9:30 AM UTC)

[06pC11I] Roles of Vacancy Complexes on the Output-power Degradation Mechanisms of 275-nm-band AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

*Shigefusa F Chichibu¹, A. Miyazaki², S. Boyama², K. Okuno², M. Oya², Y. Saito², Y. Furusawa³, A. Tanaka³, R. Tsukamoto³, M. Kushimoto³, Y. Honda³, H. Amano³, H. Ishiguro⁴, T. Takeuchi⁴, K. Shima¹ (1. Tohoku University (Japan), 2. Toyoda Gosei Co. Ltd. (Japan), 3. Nagoya University (Japan), 4. Meijo University (Japan))