Session Details

Wide Band Gap Semiconductors 4

Thu. Mar 6, 2025 6:00 PM - 7:15 PM JST
Thu. Mar 6, 2025 9:00 AM - 10:15 AM UTC
Room C(Building 9, 2F, Room 922)
Chair:Makoto Miyoshi(Nagoya Institute of Technology), Masashi Kato(Nagoya Institute of Technology)

[06pC11I]Roles of Vacancy Complexes on the Output-power Degradation Mechanisms of 275-nm-band AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

*Shigefusa F Chichibu1, A. Miyazaki2, S. Boyama2, K. Okuno2, M. Oya2, Y. Saito2, Y. Furusawa3, A. Tanaka3, R. Tsukamoto3, M. Kushimoto3, Y. Honda3, H. Amano3, H. Ishiguro4, T. Takeuchi4, K. Shima1 (1. Tohoku University (Japan), 2. Toyoda Gosei Co. Ltd. (Japan), 3. Nagoya University (Japan), 4. Meijo University (Japan))

[06pC12I]Career Diffusion and Recombination Processes in InGaN Quantum-Well Structures

*Atsushi A. Yamaguchi1, Keito Mori-Tamamura1, Susumu Kusanagi2, Yuya Kamitani2, Shigetaka Tomiya2, Maiko Ito2, Tatsushi Hamaguchi2, Rintaro Koda2 (1. Kanazawa Institute of Technology (Japan), 2. Sony Semiconductor Solutions Corp. (Japan))

[06pC13O]Study On Crystal Quality Improvement In GaInN/GaN MQW Photoelectric Transducers for OWPT Systems

*Sotaro Ishida1,Tomoki Kojima1, Takashi Egawa1 and Makoto Miyoshi1 (1. Nagoya Institute of Technology (Japan))