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Session Details

Invited & OralWide Band Gap Semiconductors

Wide Band Gap Semiconductors 4

Thu. Mar 6, 2025 6:00 PM - 7:15 PM JST
Thu. Mar 6, 2025 9:00 AM - 10:15 AM UTC

Room C(Building 9, 2F, Room 922)

Chair:Makoto Miyoshi(Nagoya Institute of Technology), Masashi Kato(Nagoya Institute of Technology)

6:00 PM - 6:30 PM JST(9:00 AM - 9:30 AM UTC)

[06pC11I]Roles of Vacancy Complexes on the Output-power Degradation Mechanisms of 275-nm-band AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

*Shigefusa F Chichibu¹, A. Miyazaki², S. Boyama², K. Okuno², M. Oya², Y. Saito², Y. Furusawa³, A. Tanaka³, R. Tsukamoto³, M. Kushimoto³, Y. Honda³, H. Amano³, H. Ishiguro⁴, T. Takeuchi⁴, K. Shima¹ (1. Tohoku University (Japan), 2. Toyoda Gosei Co. Ltd. (Japan), 3. Nagoya University (Japan), 4. Meijo University (Japan))

6:30 PM - 7:00 PM JST(9:30 AM - 10:00 AM UTC)

[06pC12I]Career Diffusion and Recombination Processes in InGaN Quantum-Well Structures

*Atsushi A. Yamaguchi¹, Keito Mori-Tamamura¹, Susumu Kusanagi², Yuya Kamitani², Shigetaka Tomiya², Maiko Ito², Tatsushi Hamaguchi², Rintaro Koda² (1. Kanazawa Institute of Technology (Japan), 2. Sony Semiconductor Solutions Corp. (Japan))

7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[06pC13O]Study On Crystal Quality Improvement In GaInN/GaN MQW Photoelectric Transducers for OWPT Systems

*Sotaro Ishida¹,Tomoki Kojima¹, Takashi Egawa¹ and Makoto Miyoshi¹ (1. Nagoya Institute of Technology (Japan))

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