Presentation Information
[03P-10]Temporal Control of F and O Radicals During Si Etching for Profile Control
*Shuto Tsuchioka1, Tran Trung Nguyen2, Kenichi Inoue2, Takayoshi tsutsumi2, Makoto Sekine2, Kenji Ishikawa2 (1. Graduate School of Engineering Nagoya-uni. (Japan), 2. Center for Low-temperature Plasma Sciences (Japan))