Presentation Information

[03P-68]p-type Layer Forming Method for Ga2O3 and GaN by Applying Ni Implantation and O Plasma Annealing

*Naohiro Shimizu1, Arun Kumar Dhasiyan1, Osamu Oda1, Nobuyuki Ikarashi1, Masaru Hori1 (1. Nagoya University (Japan))