Presentation Information
[03P-73]Defect level behavior in β-Ga2O3 homoepitaxial films annealed in nitrogen
*Yoshitaka Nakano1, Daiki Katsube2, Takashi Ogawa2, Yukari Ishikawa2, Kohei Sasaki3, Akito Kuramata3 (1. Chubu University (Japan), 2. Japan Fine Ceramics Center (Japan), 3. Novel Crystal Technology (Japan))