Presentation Information
[04aD04O]Crystal Quality Improvement of GaN Grown at 800 oC on GaN/Si Templates by Radical Enhanced MOCVD (REMOCVD) Using a Water-cooled TMG Supply Nozzle
*Swathy Jayaprasad Jayaprasad1, Arun Kumar Dhasiyan1, Naohiro Shimizu1, Hiromasa Tanaka1, Osamu Oda1, Masaru Hori1 (1. Nagoya University (Japan))
