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Session Details

Invited & OralWide Bandgap Semiconductors

Wide Bandgap Semiconductors-3

Wed. Mar 4, 2026 9:30 AM - 11:15 AM JST
Wed. Mar 4, 2026 12:30 AM - 2:15 AM UTC
Room D(N102)
Chair:Takayoshi Oshima(National Institute for Materials Science (NIMS))
9:30 AM - 10:00 AM JST(12:30 AM - 1:00 AM UTC)

[04aD01I]First-Principles Study of the Electronic Structure of Ga2O3: Effects of Lattice Strain and Point Defects

*Takahiro Kawamura1,2 (1. Graduate School of Engineering, Mie University (Japan), 2. Innovation Center for Semiconductor and Digital Future, Mie University (Japan))
10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[04aD02I]Toward High-Quality Epitaxial Growth of GaInN by RF-MBE

*Tomohiro Yamaguchi1, Takuo Sasaki2, Rie Togashi3, Mitsuki Moriya1, Takuto Katogi1, Takeyoshi Onuma1, Tohru Honda1, Katsumi Kishino3, Yasushi Nanishi4 (1. Kogakuin University (Japan), 2. National Institutes for Quantum and Radiological Science and Technology (QST) (Japan), 3. Sophia University (Japan), 4. Ritsumeikan University (Japan))
10:30 AM - 11:00 AM JST(1:30 AM - 2:00 AM UTC)

[04aD03I]β-Ga2O3 Homoepitaxial Growth by the HVPE/THVPE Method

*Hisashi Murakami1 (1. Tokyo University of Agriculture and Techonology (Japan))
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[04aD04O]Crystal Quality Improvement of GaN Grown at 800 oC on GaN/Si Templates by Radical Enhanced MOCVD (REMOCVD) Using a Water-cooled TMG Supply Nozzle

*Swathy Jayaprasad Jayaprasad1, Arun Kumar Dhasiyan1, Naohiro Shimizu1, Hiromasa Tanaka1, Osamu Oda1, Masaru Hori1 (1. Nagoya University (Japan))
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