Presentation Information

[04pD09O]Sn δ-doped β-Ga2O3 MOSFETs Enabled by Low-Defect and Smooth Epitaxy Using an α-Ga2O3 Buffer Layer

*Hao-Chun Hung1, Fang-Yu Hsu1, Rong-Ming Ko1, Han-Yin Liu2, Wei-Chou Hsu1 (1. National Cheng Kung University (Taiwan), 2. National Sun Yat-sen University (Taiwan))