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Session Details

Invited & OralWide Bandgap Semiconductors

Wide Bandgap Semiconductors-4

Wed. Mar 4, 2026 2:30 PM - 4:30 PM JST
Wed. Mar 4, 2026 5:30 AM - 7:30 AM UTC
Room D(N102)
Chair:Hisashi Murakami(Tokyo University of Agriculture and Technology)
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[04pD05I]Recent Progress in Growth of ε-Ga2O3 Thin Films and Device Applications

*Dong-Sing Wuu1 (1. National Chi Nan University (Taiwan))
3:00 PM - 3:30 PM JST(6:00 AM - 6:30 AM UTC)

[04pD06I]Crystallographic anisotropic etching of β-Ga2O3

*Takayoshi Oshima1 (1. National Institute for Materials Science (Japan))
3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[04pD07I]Enhancing β-Ga2O3 Power Devices Through Plasma-Activated Heterogeneous Integration with GaN and Diamond

*Man Hoi Wong1 (1. Hong Kong University of Science and Technology (HKUST) (Hong Kong))
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[04pD08O]Polytype and Bandgap Co-Engineering in Ga2O3 MOS-HFET

*Tzu-Hsuan Lin1, Nei-En Chiu1, Jia-Zhe Wu1, Han-Wei Chen1, Cheng-Yu Ma1, Han-Yin Liu1 (1. National Sun Yat-sen University (Taiwan))
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[04pD09O]Sn δ-doped β-Ga2O3 MOSFETs Enabled by Low-Defect and Smooth Epitaxy Using an α-Ga2O3 Buffer Layer

*Hao-Chun Hung1, Fang-Yu Hsu1, Rong-Ming Ko1, Han-Yin Liu2, Wei-Chou Hsu1 (1. National Cheng Kung University (Taiwan), 2. National Sun Yat-sen University (Taiwan))
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