Presentation Information
[PCP1-09]Effect of In addition on misfit layered compounds {(SnSe)1.16}m(NbSe2)n II
*Shogo Kuwahara1, Chiaya Yamamoto2, Junji Yamanaka3, Masanori Nagao3, Tadataka Watanabe1, Satoshi Demura1 (1. College of Science and Technology Nihon University (Japan), 2. University of Yamanashi Center of Instrumental Analysis (Japan), 3. Center of Crystal Science and Technology, Yamanashi University (Japan))
Keywords:
Single crystal growth,Electric transport property,Misfit layered compounds
Misfit layered compounds {(SnSe)1.16}m(NbSe2)n have a layered structure alternatively stacked by SnSe (monochalcogenide) and NbSe2 (dichalcogenide) layers, which have different crystal structures. Because the SnSe layer has an insulating square lattice, a stacking interface with a triangular lattice of NbSe2 lacks spatial inversion symmetry, giving rise to unique physical properties. For example, an in-plane upper critical field (Hc2) in (SnSe)1.16(NbSe2) reaches approximately 1.4 times the Pauli limit (HP), indicating an emergence of an unconventional superconducting state under high magnetic fields 1). This higher in-plane Hc2 is analogous to an enhancement of that in thin films of NbSe2 2). On the other hand, the superconducting transition temperature (Tc) is approximately 3.6 K, which is lower than that of NbSe2 single crystals. Previous studies have reported that Tc decreases under electron carrier doping via gating but increases under hole doping in NbSe2 thin films 3). Therefore, electron carrier doping into the SnSe layers of (SnSe)1.16(NbSe2) is expected to indirectly induce hole doping in the NbSe2 layers, potentially enhancing the superconducting properties. Based on this expectation, we have synthesized In-added (SnSe)1.16(NbSe2) and investigated superconducting properties.
In the present study, we demonstrate another In-added sample with a different stacking structure from the previous study, achieved by altering the sintering conditions. These samples also show enhanced Tc and Hc2compared to the parent compound, although the overall misfit character is preserved. In this presentation, we will discuss changes in the superconducting properties associated with structural modifications from the parent and previous In-added samples.
In the present study, we demonstrate another In-added sample with a different stacking structure from the previous study, achieved by altering the sintering conditions. These samples also show enhanced Tc and Hc2compared to the parent compound, although the overall misfit character is preserved. In this presentation, we will discuss changes in the superconducting properties associated with structural modifications from the parent and previous In-added samples.