Poster Session (7/1, Wed)

[P1-08] An innovative and breakthrough route via microwave-induced plasma-enhancement on atomic layer deposited-GaN films

Yihui Lin^2,3,1, Yan-Peng Zhou^2,3,1, Zhi-Xuan Zhang⁴, Yu-Quan Zhu^5,6, Lijuan Zhou^2,3,1, Wei-Hui Wang^2,3,1, Jiayuan Chen^2,3,1, Yinming Tao^2,3,1, Haixiang Huang⁹, Shui-Yang Lien^7,8, *Pao-Hsun Huang^2,3,1 (1. School of Ocean Information Engineering, Jimei University, 2. Key Laboratory for Advanced Semiconductor-grade Films, 3. Fujian Provincial Key Laboratory of Oceanic Information Perception and intelligent Processing, 4. College of Physics and Information Engineering, Fuzhou University, 5. Key Laboratory of MEMS of Ministry of Education, 6. School of Integrated Circuits, Southeast University, 7. Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, 8. School of Opto-electronic and Communication Engineering, Xiamen University of Technology, 9. XIAMEN JINGNAI TECH CO., LTD)