[G] Melting and solidification process/High temperature process

4:05 PM - 4:20 PM JST(7:05 AM - 7:20 AM UTC)

[384] Splitting of small-angle grain boundaries during directional solidification of silicon

*CHUANG Lu-Chung¹, MAEDA Kensaku¹, SHIGA Keiji¹, MORITO Haruhiko¹, FUJIWARA Kozo¹ (1. 東北大金研)

Keywords:

Grain boundary,Directional solidification,Multicrystalline silicon

The present study shows that small-angle grain boundaries, which composed of sets of dislocations, are able to split at the crystal/melt interface of silicon under certain conditions.