[S8] S8.Materials Science and high temperature processing of widegap materials IV

4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[S8.7] Growth Behavior of AlN on AlN/Sapphire Substrates
by Solution Growth Using Molten Ni-Al Alloy

*Minsoo PARK¹, Makoto OHTSUKA¹, Masayoshi ADACHI¹, Hiroyuki FUKUYAMA¹ (1. IMRAM, Tohoku Univ)

Keywords:

Aluminum nitride,single-crystalline,growth rate

An AlN single crystal-layer with a thickness of more than 2.2 μm was successfully obtained at 1720 K for 7h.