日本金属学会2022年秋期(第171回)講演大会
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Session Details

公募シンポジウム講演

[S8]S8.Materials Science and high temperature processing of widegap materials IV

Thu. Sep 22, 2022 1:00 PM - 5:00 PM JST
Thu. Sep 22, 2022 4:00 AM - 8:00 AM UTC
Rm. E D24,2Flr. Build.D
座長:吉川 健(東京大学)、福山 博之(東北大学)、美濃輪 武久(信越化学工業)
※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間5分、基調講演と招待講演は5～10分）
1:00 PM - 1:40 PM JST(4:00 AM - 4:40 AM UTC)

[S8.1]Detection and analysis of dislocations in wide bandgap semiconductor crystals

*Yukari Ishikawa1, Yongzhao Yao1, Yoshihiro Sugawara1, Koji Sato1, Daisaku Yokoe1 (1. Japan Fine Ceramics Center)
1:40 PM - 2:20 PM JST(4:40 AM - 5:20 AM UTC)

[S8.2]Defect characterization in widegap semiconductors using multiphoton microscope

*Tomoyuki Tanikawa1, Tomoka Nishikawa1, Ryuji Katayama1 (1. Osaka University)
2:20 PM - 2:40 PM JST(5:20 AM - 5:40 AM UTC)

[S8.3]Propagation behavior of threading screw dislocation during off-axis PVT growth and solution/PVT hybrid growth of 4H-SiC

*Kazuma Eto1, Takeshi Mitani1, Kenji Momose2, Tomohisa Kato1 (1. AIST, 2. Showa Denko)
2:40 PM - 2:50 PM JST(5:40 AM - 5:50 AM UTC)

break

2:50 PM - 3:30 PM JST(5:50 AM - 6:30 AM UTC)

[S8.4]Step Bunching Induced by Asymmetry of Surface Diffusion Field

*Masahide Sato1 (1. EMI, Kanazawa Univ.)
3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[S8.5]Suppression of SiC macro-defects in solution growth under the condition saturated with SiC

*Takeshi Mitani1, Sakiko Kawanishi2, Didier CHAUSSENDE3, Takeshi Yoshikawa4 (1. AIST, 2. Tohoku U., 3. CNRS-SIMaP, 4. U. Tokyo)
3:50 PM - 4:10 PM JST(6:50 AM - 7:10 AM UTC)

[S8.6]High bulk density SiC fabrication by reactive infiltration of Si into SiC/C tablets

*SOTA IKARASHI1, SAKIKO KAWANISHI2, TAKESHI MITANI3, Chaussende Didier4, TAKESHI YOSHIKAWA5, HIROYUKI SHIBATA2 (1. Tohoku Univ., 2. Tohoku Univ., 3. AIST, 4. CNRS-SIMaP, 5. Univ. Tokyo)
4:10 PM - 4:20 PM JST(7:10 AM - 7:20 AM UTC)

break

4:20 PM - 4:40 PM JST(7:20 AM - 7:40 AM UTC)

[S8.7]Growth Behavior of AlN on AlN/Sapphire Substrates
by Solution Growth Using Molten Ni-Al Alloy

*Minsoo PARK1, Makoto OHTSUKA1, Masayoshi ADACHI1, Hiroyuki FUKUYAMA1 (1. IMRAM, Tohoku Univ)
4:40 PM - 5:00 PM JST(7:40 AM - 8:00 AM UTC)

[S8.8]Theoretical study of growth rate during growth of SiC solution using Gibbs-Thomson solvent

*Tomoyuki KASHIMURA1, Takeshi YOSHIKAWA1, Hitoshi MIURA2 (1. U. Tokyo, 2. Nagoya City Univ.)
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