Presentation Information
[250]Site preference of V in 6H-SiC: A combined PL and theoretical calculation study
*Hui Chen1, Kazuki Morita2 (1. Student,School of Engineering, The Univ. of Tokyo, 2. School of Engineering, The Univ. of Tokyo)
Keywords:
バナジウム,6H-SiC,PL,理論計算,格子欠陥
The PL spectra for the V-doped 6H-SiC were measured at low temperatures, and the corresponding theoretical calculation was performed to explain the origins of the peaks in the experimental PL spectra.