講演情報
[250]6H-SiCにおけるVの固溶形態：PLと理論計算
*陳 輝1、森田 一樹2 (1. 東大工（院生）、2. 東大工（教授）)
キーワード：
バナジウム、6H-SiC、PL、理論計算、格子欠陥
The PL spectra for the V-doped 6H-SiC were measured at low temperatures, and the corresponding theoretical calculation was performed to explain the origins of the peaks in the experimental PL spectra.