[G] Semiconductor and terahertz light

11:10 AM - 11:25 AM JST(2:10 AM - 2:25 AM UTC)

[303] The electrical resistance change behaviors in MnTe₂ film

*SHIH　YUAN LI¹, Yi Shuang³, Daisuke Ando², Yuji Sutou^2,3 (1. 東北大工(院生）、2. 東北大工(教授)、3. 東北大(AIMR))

Keywords:

Semiconductor,Thin film,Electrical properties,Phase change,RF sputtering

The cross-point and hole-type devices of MnTe₂ had been fabricated and evaluated. The electrical resistance of MnTe₂ had changed by the application of the electrical filed.