講演情報
[303]The electrical resistance change behaviors in MnTe2 film
*LI SHIH YUAN1、Shuang Yi3、安藤 大輔2、須藤 祐司2,3 (1. 東北大工(院生）、2. 東北大工(教授)、3. 東北大(AIMR))
キーワード：
Semiconductor、Thin film、Electrical properties、Phase change、RF sputtering
The cross-point and hole-type devices of MnTe2 had been fabricated and evaluated. The electrical resistance of MnTe2 had changed by the application of the electrical filed.