[P] P81~P85

4:30 PM - 6:00 PM JST(7:30 AM - 9:00 AM UTC)

[P85] Effect of sputtering condition on constituent phase and electrical property of MnTe₂ film

*SHIH　YUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1. 東北大工、2. 東北大 (AIMR))

Keywords:

Phase change random access memory,Semiconductor,Radio frequency sputtering,MnTe₂,Thin film

In order to know if MnTe₂ can be used as PCRAM, we investigated the effect of sputtering condition on the constituent phase and electrical property of MnTe₂ films.