講演情報
[P85]Effect of sputtering condition on constituent phase and electrical property of MnTe2 film
*李 世元1、双 逸2、安藤 大輔1、須藤 祐司1,2 (1. 東北大工、2. 東北大 (AIMR))
キーワード：
Phase change random access memory、Semiconductor、Radio frequency sputtering、MnTe2、Thin film
In order to know if MnTe2 can be used as PCRAM, we investigated the effect of sputtering condition on the constituent phase and electrical property of MnTe2 films.