Presentation Information
[220]Electrical properties study of Si-doped GeTe
*SHIN YOUNG KANG1, Kim Mihyeon1, Shuang Yi1,2, Ando Daisuke1, Yuji Sutou1 (1. Tohoku Univ., 2. Tohoku Univ. (AIMR))
Keywords:
Phase change materials,GeTe,In-memory computing
In this study, we found that Si-doped GeTe affects the crystalline structure of GeTe during crystallization and that resistance decreases gradually with temperature.