講演情報
[220]Electrical properties study of Si-doped GeTe
*姜 信英1、金 美賢1、逸 双1,2、安藤 大輔1、須藤 祐司1 (1. 東北大工、2. 東北大学材料科学高等研究所)
キーワード：
Phase change materials、GeTe、In-memory computing
In this study, we found that Si-doped GeTe affects the crystalline structure of GeTe during crystallization and that resistance decreases gradually with temperature.