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[299] Phase change behavior in sputter-deposited RuTe₂ thin film

*SHIH　YUAN LI¹, Yi Shuang², Daisuke Ando¹, Yuji Sutou^1,2 (1. Tohoku Univ. Eng., 2. Tohoku Univ. AIMR)

Keywords:

dichalcogenide,thin film,RuTe₂,phase change material,RF sputtering

The RuTe₂ thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed to different temperatures and the physical properties had been measured.