講演情報
[299]Phase change behavior in sputter-deposited RuTe2 thin film
*李 世元1、双 逸2、安藤 大輔1、須藤 祐司1,2 (1. 東北大工、2. 東北大AIMR)
キーワード：
dichalcogenide、thin film、RuTe2、phase change material、RF sputtering
The RuTe2 thin films were deposited by using radio frequency magnetron sputtering method. The films were annealed to different temperatures and the physical properties had been measured.