[S3] S3.Trends in the development of ultra-low loss soft magneticmaterials~Toward realization of innovative power electronics techno-logies by co-creation with power semiconductors~(1)

3:40 PM - 4:20 PM JST(6:40 AM - 7:20 AM UTC)

[S3.7] [Keynote Lecture] Development of vertical GaN power semiconductors for realizing innovative power electronics systems

*Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Takuro Inamoto¹, Tsurugi Kondo¹, Masaharu Edo¹ (1. Fuji Electric Co., Ltd.)

Keywords:

半導体,デバイス,GaN

本講演では、我々が目指す縦型GaNパワーデバイスの目標特性と到達状況、技術課題について概説する。