[S1] S1 New Materials Science on Nanoscale Structures and Functions at Crystal Interface II

2:00 PM - 2:20 PM JST(5:00 AM - 5:20 AM UTC)

[S1.7] Local charge analysis of SiC-MOS interfaces using STEM

○Yu Nishiuchi¹, Satoko Toyama¹, Shun Sasano¹, Yutaro Uchida¹, Atsushi Tamura¹, Koji Kita¹, Takehito Seki¹, Naoya Shibata¹ (1. The University of Tokyo)

Keywords:

SiC-MOS,DPC STEM,STEM-EELS

This study evaluated the composition and charge distribution at NO-oxynitrided SiC-MOS interfaces using tDPC STEM and STEM-EELS. We experimentally revealed that nitrogen segregates at the Au/SiO₂ and SiO₂/SiC interfaces, and this spatial distribution directly coincides with the distribution of positive charges.