[P] P144~P151 Materials Physics

[P149] In₃SbTe₂ thin films for RF switch applications

○Tomoko Nakata¹, Yi Shuang^2,3, Daisuke Ando¹, Yuji Sutou^1,2 (1. Tohoku Univ.(Eng.), 2. Tohoku Univ.(AIMR), 3. Tohoku Univ.(FRIS))

Keywords:

Thin films,Phase change,Chalcogenide,Radio Frequency switch,High isolation

RF switches require both low signal loss in the ON state and high isolation in the OFF state. In this study, an RF switch using In₃SbTe₂ was fabricated, and its electrical characteristics were evaluated to investigate its potential for device applications.