[G] Electric/Electronic/Optical Materials

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[128] High-k Dielectric Bi₂TeO₅ Film Fabricated by Sputtering for 2D Transistors

○Haruto Kouno¹, Shogo Hatayama², Mihyeon Kim¹, Yuta Saito¹ (1. Tohoku Universty, 2. National Institute of Advanced Industrial Science and Technology)

Keywords:

2D material,dielectric material,High-k material

Bi2TeO5 thin films were fabricated by RF co-sputtering of Bi2O3 and TeO2, followed by vacuum annealing. Although amorphous as deposited, annealing at 350 degree Celsius yielded large-area, c-axis-oriented single-phase films. Eg=3.1 eV and k=24 indicate potential as 2D high-k dielectrics.