[P] P74~P87 Materials Chemistry

[P81] Effect of Substrate Pretreatment on Void Structures of InN Thin Films Prepared by Glancing-angle Evaporation

○Taisei Ushiki¹, Yasushi Inoue¹, Osamu Takai² (1. Grad. Sch. Eng., Chiba Inst. Technol．, 2. SSAME)

Keywords:

InN Thin Films,Glancing Angle Deposition (GLAD),Functional Thin Films

The effect of plasma-ion etching pretreatment on the void structure of InN thin films prepared by glancing-angle deposition was investigated. The pretreatment increased porosity and average void width without significantly changing the crystal structure, demonstrating its effectiveness for microstructure control．