Exhibitors (Materials)
[M-27] Ceramic Forum Co., Ltd.
Ceramic Forum Co., Ltd.
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| Address | 101-0054 東京都千代田区神田錦町3-19-6 楠本ビル9階 |
|---|---|
| TEL | 03-5577-2947 |
| Web site, SNS | http://www.ceramicforum.co.jp/ |
[A-20] Crystal Base Co., Ltd.
Crystal Base Co., Ltd.
Oxide single crystals, Semiconductor single crystals, Metal single crystals
| Address | 560-0082 大阪府豊中市新千里東町1-4-2 千里ライフサイエンスセンタービル11階 |
|---|---|
| TEL | 06-6170-6490 |
| FAX | 06-6170-6491 |
| Web site, SNS | https://crystalbase.co.jp/ |
[M-29] DAIWA TETSUGEN KOHSAN CO., LTD
DAIWA TETSUGEN KOHSAN CO., LTD
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| Address | 104-0032 東京都中央区八丁堀3-27-4 八重洲桜川ビル7階 |
|---|---|
| TEL | 03-5540-6838 |
| Web site, SNS | https://www.daiwa-tk.co.jp/ |
[A-24] Furuuchi Chemical Corporation
Furuuchi Chemical Corporation
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| Address | 140-0013 東京都品川区南大井6-17-17 |
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| TEL | 03-3762-8161 |
| FAX | 03-3766-8310 |
| Web site, SNS | http://www.furuchi.co.jp/ |
[M-30] Gas-Phase Growth Ltd.
Gas-Phase Growth Ltd.
Precursor pamphlets, Precursor containers
| Address | 184-0012 東京都小金井市中町2-24-16 東京農工大学 URAC 104号室 |
|---|---|
| TEL | 042-388-7917 |
| Web site, SNS | http://www.kisoh-seicho.com/ |
[M-32] GLORY CO., Ltd.
GLORY CO., Ltd.
■SiC Wafer, GaN Wafer, GaAs Wafer, InP Wafer, Sapphire Wafer ■GaAs /InP based Epi-Wafer
| Address | 161-0034 東京都新宿区上落合1-30-14 大関ビル |
|---|---|
| TEL | 03-5937-5273 |
| FAX | 03-5937-5274 |
| Web site, SNS | http://www.glory-g.co.jp/ |
[M-31] Ion Technology Center
Ion Technology Center
Ion Implantation,Semiconductor Device Fabrication Service,and Physical Analysis Service for Compound Semiconductor
| Address | 573-0128 大阪府枚方市津田山手2-8-1 |
|---|---|
| TEL | 072-859-6601 |
| FAX | 072-859-5770 |
| Web site, SNS | https://iontc.co.jp/ |
[A-14] K&R Creation Co., Ltd.
K&R Creation Co., Ltd.
TBD
| Address | 563-0055 大阪府池田市菅原町11-9-201 |
|---|---|
| TEL | 072-752-7975 |
| Web site, SNS | http://www.k-and-r.co.jp/ |
[M-26] Kojundo Chemical Laboratory Co., Ltd.
Kojundo Chemical Laboratory Co., Ltd.
CVD Materials, PVD thin-filmMaterials, Metal Powders, InrganicMaterials, CSD Materials, Other
| Address | 350-0284 埼玉県坂戸市千代田5-1-28 |
|---|---|
| TEL | 049-284-1511 |
| FAX | 049-284-1351 |
| Web site, SNS | https://www.kojundo.co.jp/ |
[M-33] OXIDE Corporation
OXIDE Corporation
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| Address | 408-0302 山梨県北杜市武川町牧原1747-1 |
|---|---|
| TEL | 0551-26-0022 |
| FAX | 0551-26-0033 |
| Web site, SNS | https://www.opt-oxide.com/ |
[M-28] TOSOH CORPORATION
TOSOH CORPORATION
1) GaN sputtering target: High purity and high density GaN target capable of forming highly oriented films by sputtering method. 2) CrSi sputtering target: High resistivity and temperature stability can be obtained. 3) Indium oxide-based sputtering targets①USR: It crystallizes at 100°C, which is difficult to achieve with ITO, and obtains low resistance.②SRE: High infrared transmittance and low resistivity can be obtained.
| Address | 105-8623 東京都港区芝3-8-2 |
|---|---|
| TEL | 03-5427-5171 |
| FAX | 03-5427-5200 |
| Web site, SNS | https://www.tosoh.co.jp/product/?category=functionality |