[19p-A306-1~16] 2.1 Detection Devices

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[19p-A306-2] Crystal Growth and Optical Properties of Ce doped (Gd, Y, Tb)₃Ga₃Al₂O₁₂ Scintillators for X-ray Imaging

〇(M1)Kazuya Omuro^1,2, Masao Yoshino^2,3, Kei Kamada^2,3,4, Kyoung Jin Kim², Takahiko Horiai^2,3, Rikito Murakami², Akihiro Yamaji^2,3, Takashi Hanada², Yuui Yokota², Shunsuke Kurosawa^2,3,5, Yuji Ohashi^2,3, Hiroki Sato^2,3, Akira Yoshikawa^2,3,4 (1.Grad. Sch. Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.NICHe, Tohoku Univ., 4.C&A, 5.ILE, Osaka Univ.)

Keywords:

X-ray imaging,scintillator,quaternary garnet oxide

Scintillators are widely used in X-ray imaging, which are applied for medical diagnostics and airport security controls. To obtain images with excellent contrast in short exposure times, scintillators are required to have high density and light yield. Recently, it has reported that substituting ternary by quaternary garnet in the matrix material dramatically improves the light yield of Ce- and Tb-doped scintillators. In this study, we report on the growth of Ce-doped (Gd, Y, Tb)₃Ga₃Al₂O₁₂ single crystals using the micro-pulling-down method and the evaluation of their optical properties.