[19p-B202-1~5] 15.1 Bulk crystal growth

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[19p-B202-5] Control of local structure and thermoelectric properties for Mg₂Si/Si thermoelectric crystals with eutectic structure

〇(M2)Naomoto Hayashi^1,2, Yuui Yokota^2,3, Takahiko Horiai^2,3, Masao Yoshino^2,3, Akihiro Yamaji^2,3, Rikito Murakami², Takashi Hanada², Hiroki Sato^2,3, Yuji Ohashi^2,3, Shunsuke Kurosawa^2,3, Kei Kamada^2,3, Akira Yoshikawa^2,3 (1.Eng., Tohoku Univ., 2.IMR, Tohoku Univ., 3.NICHe, Tohoku Univ.)

Keywords:

melt growth,thermoelectric material,eutectic structure

Mg₂Si composed of less toxic and inexpensive elements has been actively studied as an environmentally friendly next-generation thermoelectric material. However, the figure of merit ZT of the Mg₂Si is greatly reduced due to its high thermal conductivity at low temperatures. Recently, nanocomposite materials have attracted attention to reduce thermal conductivity, and among them we have focused on eutectic structures and attempted to improve thermoelectric properties. In this study, we attempted to refine the eutectic structure of Mg₂Si/Si thermoelectric crystals by changing the crystal growth rate and revealed the effect on thermoelectric properties.