[20a-C501-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20a-C501-10] Single-layer spin-orbit torque magnetization switching in high-quality ferromagnetic Weyl semimetal SrRuO₃

〇Hiroto Horiuchi¹, Yuki K. Wakabayashi², Shingo Kaneta-Takada¹, Yoshitaka Taniyasu², Hideki Yamamoto², Yoshiharu Krockenberger², Masaaki Tanaka^1,3, Shinobu Ohya^1,3 (1.The Univ. of Tokyo, 2.NTT BRL, 3.CSRN)

Keywords:

Spin orbit interaction,Weyl semimetals,Magnetic memory

SrRuO₃ (SRO) is an intriguing material known as a Weyl semimetal. Here, we demonstrate a single-layer spin-orbit torque magnetization switching for the first time in an oxide-based heterostructure using high-quality single-crystalline ferromagnetic Weyl semimetal SRO grown on a SrTiO₃ (STO) (001) substrate. We have successfully achieved current-induced magnetization switching in our SRO (20 nm)/STO device with a critical switching current density J_C of ~10⁶ A/cm² , which is one order of magnitude smaller than J_C in conventional bilayer metal systems. This switching does not require any intentional introduction of composition gradients, which implies that this phenomenon originates from the intrinsic topological properties of SRO. In our presentation, we discuss the possibility that the behavior of electrons around the Weyl nodes contributes to such a rare single-layer magnetization switching in high-quality SRO.