[20a-C501-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20a-C501-3] Electric-field driven source of photoexcited spin carriers for tunable electron spin polarization in InGaAs quantum dots

〇Hiroto Kise¹, Satoshi Hiura¹, Soyoung Park¹, Junichi Takayama¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

Keywords:

electron spin polarization,electric field effect,superlattice

We have fabricated an electric-field driven opto-spintronic device in which two layers, a GaAs barrier and a GaAs/AlGaAs superlattice barrier, are introduced as spin injection layers into an InGaAs quantum dot emitting layer. The bias dependence of the circularly polarized PL time profile is mainly investigated. In this study, we find that the +1.0 V bias condition shows a clearly longer PL rise time and higher initial circular polarization degree than the -1.0 V bias condition. This suggests that the dominant spin-injection layer can be switched between a GaAs barrier and a superlattice barrier by changing the applied bias voltage.