[20a-C501-1~11] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20a-C501-7] Epitaxial growth and characterization of superconductor Al / ferromagnetic semiconductor (In,Fe)As heterostructures on InP substrates

〇Hirotaka Hara¹, Keita Ishihara¹, Le Duc Anh^1,2,3, Masaaki Tanaka^1,3 (1.EEIS, Tokyo Univ., 2.PRESTO, JST, 3.CSRN, Tokyo Univ.)

Keywords:

heterostructure,ferromagnetic semiconductor

In this work, we have successfully grown epitaxial SC (Al) / FMS (In,Fe)As heterostructures on InP (001) substrates, by molecular beam epitaxy. The Al/(In,Fe)As bilayers were grown on three types of (In_1-x,Al_x)As buffer layers with x = 0.1, 0.15, 0.19, and thus experience different in-plane compressive strains (-0.65%, -0.81%, -0.97%, respectively). The (In,Fe)As films exhibit ferromagnetism (Curie temperature T_C are 40 K, 45K, 60 K, respectively), which is confirmed by magnetic circular dichroism (MCD), but become insulating at low temperature. These results indicates that strain can affect the ferromagnetism and transport in (In,Fe)As. On the other hand, the Al layers are successfully grown in the [111] direction, as revealed by transmission electron microscopy (TEM), and become superconducting around 1.2 K. These Al/(In,Fe)As heterostructures are good material candidates for investigating superconductor spintronics.