Presentation Information
[20p-A602-3]Extreme UV photoemission electron microscopy imaging of moiré ferroelectricity in a twisted hBN heterostructure
〇(P)Jacques Gabriel Hawecker1, Prajakta Kokate1, Risa Hocking2, Kenji Watanabe3, Takashi Taniguchi3, Julien Madeo1, Michael K. L. Man1, Andrew J. Mannix2, Keshav M. Dani1 (1.OIST, 2.Stanford University, 3.NIMS)
Keywords:
Photoemission electron microscopy,moire ferroelectricity,extreme UV
Photoemission electron microscopy (PEEM) is a powerful technique to map real space electronic distribution at different energies, providing high resolution imaging and spectroscopic information of a sample’s surface. However, typical table-top light source coupled with PEEM do not allow for: 1) Extreme UV (XUV) energies to access larger Brillouin zones 2) brightness, for nanoscale imaging and 3) time resolution . Recently, by bringing together Angle Resolved Photoemission and our ultrafast XUV source, we built a novel instrumentation capable of capturing the bandstructure of the material under optical excitation. However, to demonstrate nanometer-scale resolution XUV-PEEM imaging, one must overcome the large photon flux per area requirement and consequently space or sample charge effect. In this work, using another iteration of our light source coupled to our PEEM, we show imaging capability of resolving 2D moiré ferroelectric domain from a twisted hexagonal Boron Nitride.