Presentation Information
[21p-A305-5]Optical Recombination Processes in Nitride Semiconductors
〇Atsushi A. Yamaguchi1, Keito Mori-Tamamura1 (1.Kanazawa Inst. Tech.)
Keywords:
III-nitride semiconductor,Optical propoerties
InGaN quantum well (QW) layers are used as active layers in various optical devices, but the electronic structures and carrier dynamics in the QWs have not been fully understood. Accurate evaluation of the internal quantum efficiency (IQE) is considered necessary to comprehensive understanding of these properties. We previously proposed a simultaneous photoacoustic (PA) and photoluminescence (PL) measurement method for estimating IQE values in nitride semiconductors, and measured IQE values in GaN films and InGaN-QW samples using this method. In this method, light generated by radiative recombination is detected by PL measurement and heat generated by non-radiative recombination is detected by PA measurement simultaneously under the same excitation conditions. Furthermore, radiative and nonradiative recombination lifetimes can also be estimated by combination with time-resolved PL measurement, and carrier dynamics can be discussed. In this presentation, we will introduce the experimental setup and the principle of IQE estimation by this method, and will present some experimental results and what we have obtained from them.